Zener diode with protective PN junction portions

Details Zener diode with protective PN junction portions Zener diode with protective PN junction portions

1982-02-26

1984-11-20

Larkins, William D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 20, 357 51, 357 89, 357 90, 307318, H01L 2990

Patent

active

044842066

ABSTRACT:
A first rectifying contact portion of a semiconductor device such as a Zener diode has a small area in order to attain a hard breakdown characteristic and a low noise characteristic. When a predetermined current which is not greater than the maximum allowable instantaneous value of non-D.C. currents flows through the first rectifying contact portion, a second rectifying contact portion which has a large area starts breakdown due to a voltage drop across a resistance component connected in series with the first rectifying contact portion and a breakdown voltage of the first rectifying contact portion.
Owing to the fact that current is dispersed to the first rectifying contact portion and the second rectifying contact portion, a semiconductor device such as a Zener diode exhibiting a high endurance characteristic against surge voltages can be provided.

REFERENCES:
patent: 3281656 (1966-10-01), Noble
patent: 3345221 (1967-10-01), Lesk
patent: 3349298 (1967-10-01), Shockley et al.
patent: 3497776 (1970-02-01), Philips
patent: 3534232 (1970-10-01), Weinerth
patent: 3544397 (1970-12-01), Weinerth
patent: 3612959 (1971-10-01), Simon
patent: 3649890 (1972-03-01), Howell et al.
patent: 3662233 (1972-05-01), Clerc et al.
patent: 3968472 (1976-07-01), Taylor
patent: 4025802 (1977-05-01), Inoue et al.
patent: 4110775 (1978-08-01), Festa

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