Semiconductor device capable of preventing reduction of cut-off

Details Semiconductor device capable of preventing reduction of cut-off Semiconductor device capable of preventing reduction of cut-off

1995-09-14

1996-06-25

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257655, 257593, H01L 310328

Patent

active

055302734

ABSTRACT:
In a semiconductor device which includes a semiconductor substrate, a collector region of a first conductivity type formed on the semiconductor substrate, a base region of a second conductivity type reverse to the first conductivity type, an emitter region of the first conductivity type formed within the base region, an intermediate semiconductor layer of the second conductivity type is formed within the collector region, an additional semiconductor layer of the first conductivity type is superposed on the intermediate semiconductor layer, and the base region is overlaid on the additional semiconductor layer.

REFERENCES:
patent: 4958208 (1990-09-01), Tanaka
Shinsuke Konaka et al., "A 20 ps/G Si Bipolar IC Using Advanced SST with Collector Ion Implantation", Extended Abstracts of the 19th Conf. on Solid State Devices and Materials, Tokyo, 1987, pp. 331-334.
E. F. Crabbe et al., "Low Temperature Operation of Si and SiGe Bipolar Transistors", International Electron Devices Meeting, 1990, pp. 17-20.
Jambotkar, "Fabrication of Integrated Circuits Incorporating High-Performance Bipolar Transistors," IBM Technical Disclosure Bulletin, vol. 19, No. 3, Aug. 1976, pp. 915-918.

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