Fishing – trapping – and vermin destroying
Patent
1994-12-15
1996-08-06
Fourson, George
Fishing, trapping, and vermin destroying
324769, H01L 2166
Patent
active
055433340
ABSTRACT:
A method of screening a semiconductor device. A silicon wafer having gate electrodes formed on the gate oxide film is prepared. An insulating layer is deposited on the silicon wafer. Gate electrode portions of a group of transistors to be tested are exposed. A conductive layer is deposited on the silicon wafer having exposed gate electrodes. The conductive layer is patterned to be a wiring layer so that the gate electrodes of a group of the transistors can be electrically connected to each other. The chip area to be tested is irradiated with light having intensity enough to generate a required quantity of carriers in a depletion layer between a well and a substrate. A predetermined test voltage is applied between the wiring layer and the substrate of the silicon wafer during irradiation of the light to measure current flowing through the wiring layer and the gate oxide film. An abnormality of the gate oxide film can be detected on the basis of the measured current value. The screening method may be conducted before the completion of forming the gate electrodes. Further, gate electrode portions not to be used by a user may not be electrically connected to the gate electrode portions to be used.
REFERENCES:
patent: 4296372 (1981-10-01), Feuerbaum
patent: 4398343 (1983-08-01), Yamazaki
patent: 4473795 (1984-09-01), Wood
patent: 4598305 (1986-07-01), Chiang et al.
patent: 4760032 (1988-07-01), Turner
patent: 5391502 (1995-02-01), Wei
patent: 5442302 (1995-08-01), Fujimaki
patent: 5444000 (1995-08-01), Ohkubo et al.
Hama Kaoru
Hashimoto Kazuhiko
Kamijoh Hiroyuki
Okumura Katsuya
Ozawa Yoshio
Fourson George
Kabushiki Kaisha Toshiba
Mulpuri S.
LandOfFree
Method of screening semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of screening semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of screening semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2190715