X-ray or gamma ray systems or devices – Specific application – Diffraction – reflection – or scattering analysis
Patent
1993-12-16
1995-08-15
Dzierzynski, Paul M.
X-ray or gamma ray systems or devices
Specific application
Diffraction, reflection, or scattering analysis
378 71, 378 73, 364508, G01N 2320
Patent
active
054426766
ABSTRACT:
Measurements are made on a sample (1) to obtain an experimental profile (2) having structural features (3, 4) determined at least in part by the given characteristic and an expected profile (5) calculated for the sample using selected parameters. A degree of smoothing is applied to the experimental profile (2) to reduce the structural features (3,4) thereby producing a smoothed experimental profile (21 a) and the same degree of smoothing is applied to the calculated profile (5) to produce a smoothed calculated profile 51 a. The smoothed calculated profile (51 a) is compared with the smoothed experimental profile (21 a) to determine the difference between the smoothed profiles. The calculated profile is then modified by varying at least one of the parameters until the smoothed modified profile fits the smoothed experimental profile. The above steps are then repeated with the modified calculated profile using each time a degree of smoothing less than the previous time so that the structural features return and the final modified calculated profile (5b) provides a desired fit to the experimental profile (2) thereby enabling the given characteristic to be determined from the parameters used for the final modified profile.
REFERENCES:
patent: 4095103 (1978-06-01), Cohen et al.
patent: 4561062 (1985-12-01), Mitchell
patent: 4662222 (1987-05-01), Johnson
patent: 4974209 (1990-11-01), Hoult
patent: 5148458 (1992-09-01), Ruud
"VLSI Process Modelingl--Suprem III" C. Ho et al., IEEE Transactions on Electron Devices ED-30, No. 11, 1983 pp. 1438-1453.
"A Dynamic Theory of Diffraction for a Distorted Crystal", S. Takagi ACTA Crystollographica vol. 15, 1962 pp. 1311-1312 and the Journal of Physical Society of Japan vol. 26, 1969 pp. 1239-1253.
"X-Ray Diffraction Procedures" Klug et al., John Wiley & sons, 1974, pp. 84-87, 102-115, 354-359.
"Composition and Lattice Mismatch Measurement of Thin Semiconductor Samples by X-Ray Diffraction" Fewster et al., Journal of Appplied Physics 62 (10) 15th Nov., 1987 pp. 4154-4158.
"An Expert System for X-Ray Rocking Curve Analysis" T. Tjahadi et al., International Conference '89 On "Expert Systems in Engineering Applications" Oct. 1989.
"Simulated Annealing: An Introductory Review" J. Pannetier, Neutron Scattering Data Analysis Conf. At The Rutherford Appleton, 1990 Published In Institure of Physics Conference Series No. 107, pp. 23-44.
"Multicrystal X-Ray Diffraction of Heteroepitaxial Structures", P. F. Fewster Applied Surface Science vol. 50 (1991) pp. 9-18.
"Lattice Mismatch of Simple and Comples Layer Structures by X-Ray Diffraction" P. Fewster, "Heteroepitaxial Approaches to Semiconductors: Lattice Mismatch and Its Consequences", Electrochemical Society, 1989.
Botjer William L.
Bruce David Vernon
Dzierzynski Paul M.
Miller Paul R.
U.S. Philips Corporation
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