Method of forming polycrystalline silicon layer on substrate by

Details Method of forming polycrystalline silicon layer on substrate by Method of forming polycrystalline silicon layer on substrate by

1994-11-01

1996-06-25

Thomas, Tom

Fishing, trapping, and vermin destroying

437 41, 437907, 117 8, 117 43, 117904, 148DIG90, 148DIG93, H01L 21268, H01L 2184

Patent

active

055299512

ABSTRACT:
A method of forming a polycrystalline silicon thin film improved in crystallinity and a channel of a transistor superior in electrical characteristics by the use of such a polycrystalline silicon thin film. An amorphous silicon layer of a thickness preferably of 30 nm to 50 nm is formed on a substrate. Next, substrate heating is performed to set the amorphous silicon layer to preferably 350.degree. C. to 500.degree. C., more preferably 350.degree. C. to 450.degree. C. Then, at least the amorphous silicon layer is irradiated with laser light of an excimer laser energy density of 100 mJ/cm.sup.2 to 500 mJ/cm.sup.2, preferably 280 mJ/cm.sup.2 to 330 mJ/cm.sup.2, and a pulse width of 80 ns to 200 ns, preferably 140 ns to 200 ns, so as to directly anneal the amorphous silicon layer and form a polycrystalline silicon thin film. The total energy of the laser used for the irradiation of excimer laser light is at least 5 J, preferably at least 10 J.

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