Method of making cross point four square folded bitline trench D

Details Method of making cross point four square folded bitline trench D Method of making cross point four square folded bitline trench D

1995-02-02

1996-06-25

Thomas, Tom

Fishing, trapping, and vermin destroying

437 60, 437162, H01L 218242

Patent

active

055299440

ABSTRACT:
The invention is a high density cross point folded bitline trench DRAM cell with a cell area of only 4 lithographic squares. The access device (transfer device) is vertically disposed on the side of a trench. In a preferred embodiment, poly spacer wordlines are used. The width of the wordlines can be increased, without increasing the cell area, by increasing the depth of the shallow trench. This will result in faster cell access due to the lower RC time constant of the wordline. The diffusion contact to the storage node, as well as the access device, is placed on one side of the trench to minimize the interaction between adjacent nodes, especially with scaling. The cell has a simple topography, and uses only one level of bitline wiring.

REFERENCES:
patent: 4830978 (1989-05-01), Teng et al.
patent: 5001078 (1991-03-01), Wada
patent: 5008214 (1991-04-01), Redwine
patent: 5013680 (1991-05-01), Lowrey et al.
patent: 5014099 (1991-05-01), McElroy
patent: 5066607 (1991-11-01), Banerjee
patent: 5155059 (1992-10-01), Hieda
patent: 5214603 (1993-05-01), Dhong et al.
patent: 5216266 (1993-06-01), Ozaki
"A Trench Transistor Cross-Point Dram Cell" W. F. Richardson et al IEDM Technical Digest (1985) IEDM Conf. pp. 714-717.

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