Process for fabricating thin film transistor

Details Process for fabricating thin film transistor Process for fabricating thin film transistor

1994-07-20

1996-06-25

Thomas, Tom

Fishing, trapping, and vermin destroying

437 13, 437 40, 437 88, 437174, 437907, 437 21, 148DIG1, 148DIG4, 148DIG16, 148DIG60, 117 8, H01L 21322, H01L 2184, H01L 2126

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active

055299377

ABSTRACT:
After a pattern is transferred on silicon film crystallized by annealing, the silicon film is annealed by radiation of intense rays for a short time. Especially, in the crystallizing process by annealing, an element which promotes crystallization such as nickel is doped therein. The area not crystallized by annealing is also crystallized by radiation of intense rays and a condensed silicon film is formed. After a metal element which promotes crystallization is doped, annealing by light for a short time is performed by radiating intense rays onto the silicon film crystallized by annealing in an atmosphere containing halide. After the surface of the silicon film is oxidized by heating or by radiating intense rays in a halogenated atmosphere and an oxide film is formed on the silicon film, the oxide film is then etched. As a result, nickel in the silicon film is removed.

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