Attenuated phase shift mask with halftone boundary regions

Details Attenuated phase shift mask with halftone boundary regions Attenuated phase shift mask with halftone boundary regions

1997-01-10

1998-07-28

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

G03F 900

Patent

active

057861145

ABSTRACT:
In the production of an attenuated phase shift mask, boundary regions, e.g., inter-chip or circuit exposure light isolation frame regions and a kerf region of the mask, are formed from the halftone layer used to form the circuit pattern regions. The boundary regions are shielded from a stabilization treatment of the halftone layer serving to stabilize the transmittance of the circuit pattern regions at an increased optimum level. In this manner, the transmittance of the boundary regions remains relatively low, thereby avoiding the problem of exposure light leaking to adjacent chip areas in a step and repeat or scanning exposure process. The process also assures that reticle alignment marks formed in the frame and/or kerf regions are reliably detectible by the visible light used for mask alignment. The process eliminates the extra steps required to form isolation frames and alignment marks from a separate opaque layer, and avoids the need for data intensive sub-resolution patterning.

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