Method for determining the compensation density in n-type narrow

Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – With rotor

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324 62, 324158D, G01R 3126, G01R 2702

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active

042175470

ABSTRACT:
A method for determining the compensation density of narrow-gap semiconductors. Photo-excited carriers are generated by uniformily irradiating a sample with a laser pulse of a particular density and pulse width for a particular time length and at a low sample temperature. The laser wavelength is chosen with a photon energy sufficiently high that carriers are excited from the conduction band by normal intrinsic absorption (one-photon absorption). Subsequent to the laser pulse, conductivity-voltage measurements are taken as a function of time during the photo-electron decay. Such measurements are made for different applied source-detector connections on the same sample with identical pulse-time values for each different correction. The sample is then laser-pulsed as before with a magnetic field normal to the sample surface to obtain Hall-voltage measurements. The measurements are averaged for the same time duration and the average of all curves are used in the determination. From the conductivity-voltage measurments and the Hall-voltage measurements, the mobility .mu., and carrier density n, can be determined. The time dependence of .mu. and n measured during the photo-electron decay yields values of mobility as a function of n. A mobility vs carrier density curve is then prepared and compared with previously prepared curves to obtain a match and thereby determine the quality of the sample. Thus characterization of n-type narrow-gap semiconductors can be made.

REFERENCES:
patent: 3745454 (1973-07-01), Nikirk et al.
Nimtz et al., "Transient Carrier Decay"; Physical Review B; vol. 10; No. 8; ct. 15, 1974; pp. 3302-3310.

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