Two-terminal mim device having stable non-linearity characterist

Details Two-terminal mim device having stable non-linearity characterist Two-terminal mim device having stable non-linearity characterist

1994-01-31

1995-08-15

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257537, 359 58, G02F 113

Patent

active

054422248

ABSTRACT:
A two-terminal nonlinear device according to the present invention includes a lower electrode of a thin Ta film doped with nitrogen which is formed on a substrate, an anodized oxide film formed by anodizing a surface of the lower electrode, and an upper electrode of a metal thin film which is formed on the anodized oxide film, wherein the thin Ta film includes a structure in which first portions and second portions are alternately deposited, the first portions containing a different amount of nitrogen from that contained in the second portions.

REFERENCES:
patent: 4413883 (1983-11-01), Baraff et al.
patent: 4683183 (1987-07-01), Ono
patent: 5274485 (1993-12-01), Narita et al.

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