Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1994-12-16
1995-08-15
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257220, 257221, 257230, 377 62, H01L 2978, H01L 2714, H01L 3100
Patent
active
054422086
ABSTRACT:
It is known to reduce the leakage current or dark current in charge-coupled devices with buried channels such as, for example, charge-coupled imaging devices by bringing the surface to the inverted state. In such a device, however, it is not possible to empty the channel completely locally in usual manner in that the charge is drained off through the substrate by means of a voltage pulse applied to the gates (charge reset). To be able to carry out charge reset nevertheless, the voltage pulse is applied between the substrate and the intermediate zone interposed between the substrate and the CCD channel. Since this voltage pulse is active over the entire range of the device, the device also prevents charge from being removed in locations where this is not desired when the pulse is applied. It is possible in this manner to carry out charge reset, for example, in the imaging section only, in imaging devices without removing the information which is simultaneously in store in the memory section and/or in the read-out register.
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"1GHz CCD Transient Detector" L. Sankaranarayanan et al, IEDM '91, Digest pp. 179-182.
Bosiers Jan T. J.
Kleimann Agnes C. M.
Roks Edwin
Biren Steven R.
Ngo Ngan V.
U.S. Philips Corporation
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