Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1993-10-18
1995-08-15
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 34, 257 39, 505191, 505170, 505237, 505832, 427 62, 365162, H01L 3922, B05D 512, H01B 1200, G11C 1144
Patent
active
054421950
ABSTRACT:
A superconducting device may include a superconducting weak link equipped with plural superconducting devices that are used as input-output terminals formed on the same plane and at least one current source for applying current to at least one of these superconducting electrodes. A superconducting device suitable for high integration can be realized as it enables structuring of a superconducting weak link 1 equipped with plural superconducting electrodes 101, 102, 103 and 104 that can be used as input-output terminals and changing symmetry of superconducting electrode arrangement through the form of a normal conductor 201 which is forming a superconducting weak link. In addition, when this superconducting device is used as a quasi-particle injection type device, a superconducting device with plural superconducting electrodes that can be used for a gate electrode, drain electrode or control electrode can be realized. Further, a superconducting device equipped with new functions (e.g. motion as a neuron device) which are capable of high integration can be realized by utilizing these characteristics. Furthermore, being a proximity effect type, superconducting weak link has an advantage of realizing an ultra highspeed, low electricity consuming switching device.
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Hatano Mutsuko
Nishino Toshikazu
Saitoh Kazuo
Hitachi , Ltd.
Saadat Mahshid D.
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