Process of making self-aligned amorphous-silicon thin film trans

Details Process of making self-aligned amorphous-silicon thin film trans Process of making self-aligned amorphous-silicon thin film trans

1993-04-29

1995-08-15

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437101, 437229, 437909, 437187, 437181, H01L 21331, H01L 2184

Patent

active

054419050

ABSTRACT:
A thin film transistor structure and fabrication method for active matrix liquid crystal display. The structure is a self-aligned coplanar/staggered one. The feature of this structure is the self-aligned source and drain electrode to minimize the stray capacitance between the gate and the drain and the source. The source and drain electrodes are obtained by exposing negative photoresist on top of the transistor by incident light from the back of the transparent substrate using the gate electrode as a mask.

REFERENCES:
patent: 4958205 (1990-09-01), Takeda et al.
patent: 5075237 (1991-12-01), Wu
patent: 5091337 (1992-02-01), Wantanbe

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