Process for fabricating phase shift mask and process of semicond

Details Process for fabricating phase shift mask and process of semicond Process for fabricating phase shift mask and process of semicond

1992-09-10

1995-08-15

Chapman, Mark A.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

364489, 364490, 2504911, 2504922, 382144, G03F 900

Patent

active

054418348

ABSTRACT:
When the data of a mask pattern of a phase shift mask is to be made, the pattern data is separated into a real pattern data layer having the data of real patterns and a phase shift pattern data layer having the data of phase shift patterns. After this, it is verified whether or not the mask pattern satisfies the regulation of the gap of in-phase patterns, in which lights having transmitted through patterns adjacent to each other are in phase. It is also verified whether or not the mask pattern satisfies the regulation of the gap of out-of-phase patterns, in which lights having transmitted through patterns adjacent to each other are out of phase.

REFERENCES:
patent: 5045417 (1991-09-01), Okamoto
patent: 5278816 (1994-01-01), Russell
Hirai, et al "Automatic Pattern Generation System for Phase Shifting Mask" in Digest of Technical Papers-1991 Symposium on VLSI Technology, pp. 95 and 96.

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