Method for the production of highly pure copper thin films by ch

Details Method for the production of highly pure copper thin films by ch Method for the production of highly pure copper thin films by ch

1994-08-25

1995-08-15

King, Roy V.

Coating processes

Coating by vapor, gas, or smoke

Metal coating

427124, 427123, 427314, C23C 1618

Patent

active

054417660

ABSTRACT:
The present invention relates to a method for the production of highly pure copper thin films free from carbonaceous impurities, which comprises depositing a thin copper film using an organic copper compound precursor containing ketoesters alone or in combination with a Lewis base as ligands, by which the ligands are not thermally decomposed during the vapor deposition.

REFERENCES:
patent: 3356527 (1967-12-01), Moshier et al.
patent: 4442138 (1984-04-01), Bich et al.
patent: 5358743 (1994-10-01), Hampden-Smith et al.
Chem. Mater., vol. 4, No. 3, 1992, pp. 577-582, R. Kumar, et al., "Copper (I) Precursors For Chemical Vapor Deposition Of Copper Metal".
Chem. Mater., vol. 4, No. 4, 1992, pp. 788-795, H. K. Shin, et al., "Hot-Wall Chemical Vapor Deposition Of Copper From Copper (I) Beta-Diketonate Compounds, (Beta-Diketonate) CuLn, Via Thermally Induced Disproportionation Reactions".

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