Semiconductor memory device including a component having improve

Details Semiconductor memory device including a component having improve Semiconductor memory device including a component having improve

1993-11-12

1996-02-06

Nelms, David C.

Static information storage and retrieval

Powering

365149, 365182, 36523006, G11C 700

Patent

active

054901162

ABSTRACT:
In a semiconductor memory device including a boosting circuit for generating a high voltage constantly, and a word line driving circuit for transmitting a high voltage from the boosting circuit on a selected word line, a capacitor for stabilizing the high voltage generated by the boosting circuit is formed of a series of capacitive elements using a FET having a gate insulating film identical in thickness to that of a insulating gate type field effect transistor in the memory device. A voltage applied across each capacitive element is relaxed, and the capacitor is improved in dielectric breakdown voltage characteristics, to stably supply the high voltage.

REFERENCES:
patent: 4788664 (1988-11-01), Tobita
patent: 4980799 (1990-12-01), Tobita
Martino Jr., et al., "An On-Chip Back-Bias Generator for MOS Dynamic Memory", IEEE Journal of Solid-State Circuits, vol. SC-15, No. 5, Oct. 1980, pp. 820-826.

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