Method of forming self-aligned contact in semiconductor devices

Details Method of forming self-aligned contact in semiconductor devices Method of forming self-aligned contact in semiconductor devices

1981-05-11

1982-10-12

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29591, 148187, H01L 2128

Patent

active

043531598

ABSTRACT:
A method of forming buried contacts that eliminates the possibility of the inadvertent removal of portions of the silicon body is described wherein a patterned nitride masking layer is formed on portions of conductive interconnects and gate lines. Thereafter, a second oxide layer is grown in order to surround the masking nitride layer. The nitride layer may now be easily removed using a hot phosphoric acid dip which will etch away only the nitride layer to form contact openings in the oxide layer without affecting the underlying layer.

REFERENCES:
patent: 4178674 (1979-12-01), Liu
patent: 4196443 (1980-04-01), Dingwall
patent: 4225875 (1980-09-01), Ipri
patent: 4236167 (1980-11-01), Woods
patent: 4263057 (1981-04-01), Ipri
patent: 4312680 (1982-01-01), Hsu
patent: 4313782 (1982-02-01), Sokoloski
patent: 4318216 (1982-03-01), Hsu
patent: 4322881 (1982-04-01), Enomoto et al.

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