Varactor diode having a stepped capacitance-voltage profile

Details Varactor diode having a stepped capacitance-voltage profile Varactor diode having a stepped capacitance-voltage profile

1992-12-31

1994-08-09

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Voltage variable capacitance device

With specified dopant profile

257595, 257480, 257 12, 257 14, H01L 2992

Patent

active

053369238

ABSTRACT:
A varactor diode having a stepped capacitance-voltage profile, formed in heterostructural integrated circuit technology. Several layers in the diode structure have pulse doping to confine conduction in the diode to a sheet of charge that provides the stepped capacitance-voltage profile. The structural design of the diode may be modified to attain desired capacitance-voltage characteristics.

REFERENCES:
patent: 4902912 (1990-02-01), Capasso et al.
patent: 5153682 (1992-10-01), Goto et al.
patent: 5166766 (1992-11-01), Grudtowski et al.
patent: 5216260 (1993-06-01), Schubert et al.

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