Charge coupled device

Details Charge coupled device Charge coupled device

1978-06-29

1980-08-12

Tupman, W. C.

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29590, 357 24, 357 91, B01J 1700

Patent

active

042165741

ABSTRACT:
A two-phase buried-channel charge coupled device wherein a doped layer of first type conductivity is formed with a predetermined doping concentration under a surface of a semiconductor body of second type conductivity. A first plurality of electrodes is formed in spaced relationship on the surface over the doped layer. Particles generating the first type conductivity are ion implanted into regions of the doped layer between the first plurality of electrodes, increasing the doping concentration of the portion of the doped layer disposed beneath such spaced regions. A second plurality of electrodes is formed over the increased concentration portions of the doped layer. The first plurality of electrodes provides the transfer gates of the device and the second plurality of electrodes provides the storage gates for the device.

REFERENCES:
patent: 3950188 (1976-04-01), Bower
patent: 4062699 (1977-12-01), Armstrong

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