Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Patent
1992-10-05
1994-08-09
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
257 11, 257453, 257459, 257622, 313542, H01L 2948
Patent
active
053369025
ABSTRACT:
This invention relates to a semiconductor photo-electron-emitting device for emitting photoelectrons excited from the valence band to the conduction band by incident photons on a semiconductor layer. The device includes a Schottky electrode formed on the emitting surface on a surface of the semiconductor layer, and a conductor layer formed on a surface opposite to the emitting surface. A set bias voltage is applied between the Schottky electrode and the conductor layer to accelerate photoelectrons generated by the excitation of incident photons to the emitting surface and to transfer the accelerated photoelectrons from an energy band of a smaller effective mass to an energy band of a larger effective mass.
REFERENCES:
patent: 3867662 (1975-02-01), Endriz
patent: 3958143 (1976-05-01), Bell
patent: 4000503 (1976-12-01), Matare
patent: 4352117 (1982-09-01), Cuomo et al.
patent: 5047821 (1991-09-01), Costello et al.
patent: 5118952 (1992-06-01), Sakamoto et al.
Takeda et al., "Electrical and Optical Properties of Ag/p-InPy p-InGaAs Schoky Photodioes", Japanese Journal of Applied Physics, vol. 23, No. 10, Oct., 1984, pp. 1341-1344.
Kenneth Costello, Gary David, Robert Weiss and Verle Aebi, "Transferred electron photocathode with greater with 5% quantum efficiency beyond 1 micron," Varian Electro Optical Sensor Products, Palo Alto, Calif., 1990, pp. 1-11.
Yoshikazu Takeda, Shin-ichi Takigawa and Akio Sasaki, "Electrical and Optical Properties of Aq/p-InP/p-InGaAs Schottky", Japanese Journal of Applied Physics, vol. 23, No. 10, Oct., 1984 pp. 1341-1344.
Asakura Norio
Hirohata Toru
Ihara Tuneo
Kuroyanagi Tomihiko
Mizushima Yoshihiko
Hamamatsu Photonics K.K.
Mintel William
LandOfFree
Semiconductor photo-electron-emitting device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor photo-electron-emitting device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor photo-electron-emitting device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-217720