Semiconductor device

Details Semiconductor device Semiconductor device

1984-09-17

1985-12-17

Edlow, Martin H.

357 65, H01L 2974

Patent

active

045595518

ABSTRACT:
The semiconductor device has a first emitter layer and an auxiliary first emitter layer each having a first electrical conductivity, a first base layer having a second electrical conductivity, a second base layer having said first electrical conductivity and a second emitter layer having said second electrical conductivity. The layers are formed in the stated order from one main surface of the semiconductor to the other with the first base layer being partially exposed in the region of the auxiliary first emitter layer on said one main surface to form a gate region. A heavy metal impurity such as gold or platinum whose density is higher than the impurity density determining the electrical conductivity of said second base layer is selectively diffused in a particular region which extends through said gate region to make the specific resistance of said second base layer inside said particular region higher than the specific resistance of said second base layer outside said particular region.

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patent: 3988772 (1976-10-01), Krishna
patent: 4021837 (1977-05-01), Hutson
patent: 4177477 (1979-12-01), Hokuyo et al.
patent: 4195306 (1980-03-01), Fullman et al.
patent: 4214254 (1980-07-01), Kimura et al.
patent: 4314266 (1982-02-01), Temple

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