Method for defining a region on a wall of a semiconductor struct

Details Method for defining a region on a wall of a semiconductor struct Method for defining a region on a wall of a semiconductor struct

1995-06-07

1997-09-16

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

437 20, 437 35, 437 36, 437931, 437962, 148DIG106, 430311, 438514, 438524, 438696, H01L 21027, H01L 21033

Patent

active

056680180

ABSTRACT:
A device and method are described for defining a region on a wall of a semiconductor structure, such as a sidewall of a trench formed in a semiconductor substrate. The method includes the steps of forming a vertical structure above the semiconductor structure and spaced parallel to the wall; providing within the vertical structure an area of one of transparence, reflection or refraction; and projecting light at a given angle to the wall, wherein only a portion of the light passes the vertical structure via the area provided therein to impinge upon the wall of the semiconductor structure, and thereby define the region on the wall. As an alternative, the area can comprise an aperture in the vertical structure such that the vertical structure can be employed as a mask to direct selective ion implantation of the wall.

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G. Fuse et al., Appl. Phys. Lett., 54(16)(1989)1534, "Indirect trench sidewall doping by implantation of reflected ions" Apr. 1989.
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Cronin et al., "Line and Via Intrerconnect Structure Using A Single Mask," IBM Technical Disclosure Bulletin,vol. 32, No. 12, pp. 146-147, May 1990.

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