Multilayer P-N junction semiconductor switching device having a

Details Multilayer P-N junction semiconductor switching device having a Multilayer P-N junction semiconductor switching device having a

1973-09-20

1976-09-07

James, Andrew J.

357 51, 357 67, 357 86, 357 55, H01L 2974, H01L 2348, H01L 2906, H01L 2702

Patent

active

039797678

ABSTRACT:
A semiconductor switching device is disclosed which includes a wafer comprising at least four semiconductive layers with adjacent layers being of opposite conductivity type to form a plurality of P-N junctions. At least part of the P-N junction between one outer layer of the four semiconductive layers and an adjacent layer is shunted by an additional layer formed in the wafer. The additional layer forms an electrical resistance path across the P-N junction, and is prepared by sintering or alloying a metal layer into the wafer material. A method of making the semiconductor switching device is also disclosed.

REFERENCES:
patent: 3274460 (1966-09-01), Pessok
patent: 3445301 (1969-05-01), Topas et al.
patent: 3472688 (1969-10-01), Hayashi et al.
patent: 3548269 (1970-12-01), MacDougall et al.
patent: 3566210 (1971-02-01), Dececco

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