Method of manufacturing compound semiconductor apparatus

Details Method of manufacturing compound semiconductor apparatus Method of manufacturing compound semiconductor apparatus

1985-12-16

1988-04-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

65 573, 148DIG12, 148DIG151, 1562739, 357 49, 357 50, 357 55, 437208, 437225, 437746, H01L 21302, H01L 2176

Patent

active

047389354

ABSTRACT:
A method of manufacturing a compound semiconductor device has the steps of mirror-polishing a surface of each of two compound semiconductor substrates, bringing the mirror-polished surfaces of the two compound semiconductor substrates in contact with each other in a clean atmosphere and in a state wherein substantially no foreign substances are present therebetween, and annealing the compound semiconductor substrates which are in contact with each other so as to provide a bonded structure having a junction with excellent electrical characteristics at the interface.

REFERENCES:
patent: 3239908 (1966-03-01), Nakamura
patent: 3351502 (1967-11-01), Rediker
patent: 4451843 (1984-05-01), Dahlberg
patent: 4638552 (1987-01-01), Shimbo et al.
A. G. Milnes et al., "Heterojunctions and Metal-Semiconductor Junctions", Academic Press, New York, 1972; pp. 226-281.
P. M. Campbell et al., "150 Volt Channel GaAs FET", IEDM Technical Digest, 1982, pp. 258-260.

Affiliated with

Also associated with

Rating

Method of manufacturing compound semiconductor apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing compound semiconductor apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing compound semiconductor apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2175135