Process and apparatus for preparing finely-divided silicon dioxi

Details Process and apparatus for preparing finely-divided silicon dioxi Process and apparatus for preparing finely-divided silicon dioxi

1984-01-30

1985-12-17

Cooper, Jack

Chemistry of inorganic compounds

Silicon or compound thereof

Oxygen containing

423337, C01B 3312

Patent

active

045592187

ABSTRACT:
Process and apparatus are provided for preparing finely-divided silicon dioxide having high thickening capacity and good thixotropic properties by reaction of silicon fluoride in the vapor phase with water vapor, combustible gas and free oxygen-containing gas in a flame reaction zone to form silicon dioxide and hydrogen fluoride while cooling the gaseous reaction mixture in that portion of the reaction zone adjacent the base of the flame by contact with a cooling surface maintained at a temperature below 500.degree. C. but above the dew point of the reaction waste gases generated in the flame reaction.

REFERENCES:
patent: 3233969 (1966-02-01), Heller et al.
patent: 4292290 (1981-09-01), Tunison

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