Picosecond bistable optical switch using two-photon transitions

Details Picosecond bistable optical switch using two-photon transitions Picosecond bistable optical switch using two-photon transitions

1983-12-22

1985-12-17

Punter, William H.

350393, G02F 1015, G02F 135

Patent

active

045589232

ABSTRACT:
A bistable optical switch comprising a Fabry-Perot resonator containing a nonlinear semiconductor medium with a desired band structure and whose susceptibility (refractive index) varies with optical energy density. The Fabry-Perot resonator is biased to a point where two stable transmission states are possible. Switching is accomplished by pumping the nonlinear material with an energy hw in the range 1/2.DELTA..sub.g <hw<.DELTA..sub.g, where .DELTA..sub.g is the bandgap between the upper valence band and the conduction band of the nonlinear material, in order to stimulate a two-photon valence-to-conduction band absorption transition at a non-minimum energy and thereby make possible a one-hw photon virtual transition between the heavy hole and split-off valence bands of the nonlinear material. This virtual transition alters the susceptibility thereby switching the resonator to a different stable transmission state. Switching times on the order of picoseconds are obtained because switching-time is not dependent on the carrier recombination time.

REFERENCES:
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patent: 4253728 (1981-03-01), Venkatesan
Agrawal et al, "Theory of Two-Photon Double-Beam Optical Bistability", Phcal Review A, 12-1981, pp. 3173-3181.
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Hanamura, E. "Optical Bistable System Presponding in Pico-Second". Solid State Communications, vol. 38, pp. 939-942, Pergamon Press Ltd. 1981. Great Britain.
"Bistable Optical Devices Promise Subpicosecond Switching" IEEE Spectrum Jun. 1981, pp. 26-33.
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Meyer, J. R.; Kruer, M. R.; Bartoli, F. J.: "Optical Heating in Semiconductors: Laser Damage in GE, Si, InSb, and GaAs"; J. Appl. Physics, 51(10), Oct., 1980: pp. 5513-5521.

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