Semiconductor device having ultrahigh-mobility

Details Semiconductor device having ultrahigh-mobility Semiconductor device having ultrahigh-mobility

1987-04-20

1989-01-03

Edlow, Martin H.

357 16, H01L 29161, H01L 27/12

Patent

active

047960680

ABSTRACT:
A semiconductor device which utilizes the fact that the effective mass of charged particles becomes exceedingly large at certain points in the direction of a periodically repeating potential by virtue of a periodic structure in which semiconductor layers are stacked in the form of a superlattice. The periodic structure enables the movement of charged particles to be one-dimensional and thus permits a great improvement in the mobility of charged particles in the channel direction. Accordingly, it is possible to realize a FET of ultrahigh mobility.

REFERENCES:
patent: 3882533 (1975-05-01), Dohler
patent: 4654090 (1977-03-01), Burnham
Patent Abstracts of Japan, vol. 10, No. 99, Apr. 16, 1986.
IBM Tech. Disel Bull., vol. 27, No. 4B, Sep. 1984, pp. 2582-2593.
Appl. Phys. Lett. vol. 47, No. 12, Dec. 15, 1985, pp. 1324-1326.
Proceed. 1985 Int. Electron Device Mee't., Dec. 1-4, 1985, pp. 558-561.
Fowler et al, I.B.M. Tech. Discl. Bull., vol. 12, No. 12, May 1970.

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