Semiconductor devices having fuses

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357 45, 357 51, 357 54, 357 71, H01L 2352, G11C 1700

Patent

active

044132727

ABSTRACT:
A semiconductor memory device has fuses coated with a protecting layer. The protecting layer is selectively etched to open windows so as to expose narrow center portions of the fuses. After the opening of the center windows, the fusing operation of the fuses is carried out to open a gap in the center window portion of the fuse material. In a preferred embodiment, another protective layer is then added to fill the gaps in the blown fuses.

REFERENCES:
patent: 3564354 (1971-02-01), Aoki et al.
patent: 3792319 (1974-02-01), Tsang
Deliduka et al., IBM TDB vol. 19, No. 4, Sep. 1976, p. 1161.

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