Method for fabricating a gallium arsenide semiconductor device

Details Method for fabricating a gallium arsenide semiconductor device Method for fabricating a gallium arsenide semiconductor device

1984-06-29

1985-12-17

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 148 15, 148175, 148187, 357 232, 357 61, 357 91, 357 239, H01L 21265, H01L 2120

Patent

active

045585091

ABSTRACT:
A method for forming a FET in a gallium arsenide substrate whereby a gate is positioned on a [100] surface of the gallium arsenide substrate in the [011] orientation, active impurities are ion implanted to form FET source and drain regions which are self-aligned with respect to the gate, and the structure is annealed subsequent to the ion implanting whereby the active impurities are caused to diffuse laterally and thereby form channel region beneath the gate.

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patent: 4325747 (1982-04-01), Ristow
patent: 4330343 (1982-05-01), Christou et al.
patent: 4396437 (1983-08-01), Kwok et al.
Yokoyama et al., Appl. Phys. Letts. 42, (Feb. 1983), 270.
McLaughlin et al., Appl. Phys. Letts. 44, (Jan. 1984), 252.
Kuzuhara et al., J. Appl. Phys. 54, (1983), 3121.

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