Method of manufacturing photosensors

Details Method of manufacturing photosensors Method of manufacturing photosensors

1982-03-11

1983-11-01

Demers, Arthur P.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

204298, C23C 1500

Patent

active

044129009

ABSTRACT:
A method of manufacturing photosensors is disclosed which comprises the steps of forming a photo-conductor film made chiefly of silicon and containing hydrogen on a desired substrate, forming a transparent conductive film on the photo-conductor film by sputtering, and heating the photosensor having the sputtered transparent conductive film at least at 140.degree. C. and not higher than 280.degree. C. The heat treatment is performed preferably at a temperature between 170.degree. to 250.degree. C., at which greater effect will be provided. This heat treatment remarkably improves the photo-response speed.

REFERENCES:
patent: 3798146 (1974-03-01), Wan et al.
patent: 4227078 (1980-10-01), Yamamoto
patent: 4233506 (1980-11-01), Yamamoto
patent: 4265991 (1981-05-01), Hirai et al.

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