Method of forming Schottky-I.sup.2 L devices by implantation and

Details Method of forming Schottky-I.sup.2 L devices by implantation and Method of forming Schottky-I.sup.2 L devices by implantation and

1980-11-26

1982-07-06

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 29576T, 148187, 357 15, 357 67, 357 91, 357 92, H01L 21263, H01L 2948, H01L 21285

Patent

active

043381391

ABSTRACT:
A method for manufacturing a semiconductor device having a Schottky junction which comprises a process for burying first and second regions of a second conductivity type spaced from each other in a semiconductor body of a first conductivity type, a process for locally disposing a first interconnection layer made of a metal on a surface region of the semiconductor body facing the first region, a process for forming an insulating film on the surface of the first interconnection layer by subjecting the surface to anodic oxidation, a process for ion-implanting an impurity of the second conductivity type into the semiconductor body except a portion thereof under the first interconnection layer at such an energy level that the impurity may reach the first and second regions, a process for activating the ion-implanted layer by applying a laser beam thereto, and a process for forming a second interconnection layer connected with the activated layer by covering the whole surface of the semiconductor body with a metal and patterning the metal.

REFERENCES:
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patent: 4254428 (1981-03-01), Feth et al.
patent: 4269631 (1981-05-01), Anantha et al.
patent: 4283439 (1981-04-01), Higashinakagawa et al.
Anantha et al., IBM-TDB, 22 (1979) 575.
Chu et al., IBM-TDB, 22 (1980) May, No. #12.
Brack et al., IBM-TDB, 19 (1976) 2592.
D. D. Tang et al., "Sub-Nanosecond Self-Aligned I.sup.2 L/MTL Circuits" IEOM Technical Digest, Dec. 3-5, 1979, p. 201.

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