Fabrication method for vertical PNP structure with Schottky barr

Details Fabrication method for vertical PNP structure with Schottky barr Fabrication method for vertical PNP structure with Schottky barr

1982-03-05

1983-11-01

Saba, W. G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576W, 29578, 29589, 29590, 148 15, 148187, 357 15, 357 34, 357 44, 357 91, 427 84, H01L 21265, H01L 21283

Patent

active

044123760

ABSTRACT:
A vertical PNP bipolar transistor structure with Schottky Barrier diode emitter is disclosed which simplifies the structure and process steps for combining a complementary PNP in an NPN integrated circuit and improves the speed and density of the vertical PNP. The PNP emitter is formed with a Schottky contact such that only the PNP base region is contained in the NPN emitter junction structure. The structure uses a separately masked ion/implant for the NPN intrinsic base implant which also forms the PNP collector region so that the PNP base doping profile can intercept the PNP collector profile at a lower concentration resulting in lower collector/base capacitance, lower series collector resistance and higher collector/base breakdown voltage for the PNP. Since the base doping concentration is lower in the structure and the emitter has no sidewall capacitance, the PNP emitter-base capacitance is greatly reduced. These features result in an improved frequency response for the PNP structure.

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