Method of making ion implanted reverse-conducting thyristor

Details Method of making ion implanted reverse-conducting thyristor Method of making ion implanted reverse-conducting thyristor

1979-12-05

1981-07-14

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 357 38, 357 91, H01L 21265

Patent

active

042784760

ABSTRACT:
A method for making a pnpn semiconductor reverse conducting thyristor comprises the steps of forming n-type semiconductor layers on both sides of a p-type semiconductor substrate for forming an n-type emitter layer and an n-type anode-base layer. A p-type semiconductor impurity region is formed in the n-type anode-base layer for forming a p-type anode layer. A p.sup.+ -type semiconductor layer is ion implanted in the p-type substrate adjacent to the n-type cathode emitter layer by irradiating it with boron atoms.

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Martin F. W. Nuclear Instruments & Methods, 72 (1969) 223.

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