Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1982-03-22
1984-02-07
Smith, John D.
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
427 99, 427253, H01L 21285
Patent
active
044303645
ABSTRACT:
An aluminum thin film (14, 24) for semiconductor devices has been heretofore formed by vacuum deposition. However, because the aluminum to be deposited on a semiconductor substrate by vacuum deposition has a directional property of growth, breakage of the resultant aluminum wiring often occurred at a step or sidewall (2a) of the substrate.
The present invention provides a method for forming the aluminum thin film (14, 24) by chemical vapor deposition, in which AlCl.sub.3 is reacted with molten aluminum (46) to form AlCl, and the produced AlCl is decomposed into Al and AlCl.sub.3 in the vicinity of the semiconductor substrate, i.e. wafer (47), maintained at a low temperature so as to cause the produced Al to be grown on the wafer (47). In accordance with the present invention, the an aluminum thin film (24) having a uniform thickness can be formed.
REFERENCES:
patent: 3471321 (1969-10-01), Dualline, Jr. et al.
patent: 4328261 (1982-05-01), Heinecke et al.
Silvestri, "Aluminum Deposition with Good Step Coverage", IBM TDB, vol. 21, No. 1, Jun. 1978, pp. 396.
Fujitsu Limited
Smith John D.
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