Semiconductor device manufacturing: process – Repair or restoration
Patent
1996-12-20
2000-12-12
Niebling, John F.
Semiconductor device manufacturing: process
Repair or restoration
438598, 438599, 438662, 438708, H01L 2100, H01L 2144, H01L 21302
Patent
active
061597538
ABSTRACT:
A method and an apparatus for editing an integrated circuit. In one embodiment, an integrated circuit substrate is placed into a laser chemical vapor deposition (LCVD) tool and a conductive metal film is deposited onto the integrated circuit substrate over an area of interest. The integrated circuit substrate is subsequently placed into a focused ion beam (FIB) tool where an optional FIB cleaning step is performed on the conductive element deposited by the LCVD tool to help ensure that a good electrical contact can be made. The FIB tool is also used to introduce any desired cuts into signal lines of the integrated circuit to complete edits. The FIB is also used to remove passivation over integrated circuit nodes of interest to expose buried metal lines for subsequent coupling to the conductive element deposited with the LCVD tool. The FIB tool is then used to deposit a focused ion beam chemical vapor deposition (FIBCVD) conductive element between the exposed integrated circuit nodes of interest and the conductive element deposited with the LCVD tool. As a result, a new conductive element between the nodes of interest is formed through the conductive elements formed by both the LCVD and FIB tools.
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Scott Silverman, "Laser Microchemical Technology Enables Real-Time Editing of First-Run Silicon," Solid State Technology, 1996.
Livengood Richard H.
Winer Paul
Intel Corporation
Nguyen Ha Tran
Niebling John F.
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