Method of manufacturing a semiconductor device comprising a non-

Details Method of manufacturing a semiconductor device comprising a non- Method of manufacturing a semiconductor device comprising a non-

1995-07-31

1997-06-17

Niebling, John

Fishing, trapping, and vermin destroying

437191, 437926, H01L 218247

Patent

active

056396791

ABSTRACT:
Disclosed herein is a method to manufacture semiconductor memory devices that reduces the occurrence of excess deletion failure in a large number of non-volatile memory cells that may be electrically deleted at a time. The invented method also simplifies the manufacture process to improve the production throughput. A thin silicon film 11, a thin silicon oxide film 12, and a thick polycrystalline silicon film 13 that are laminated to comprise a floating gate electrode 4 are continuously formed in a heat treatment furnace having at least two gas inlets so that the film interfaces are not exposed to the atmosphere which usually contains contaminating impurities.

REFERENCES:
patent: 5147813 (1992-09-01), Woo
patent: 5441904 (1995-08-01), Kim et al.
patent: 5559048 (1996-09-01), Inoue

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