Schottky barrier diode and method

Details Schottky barrier diode and method Schottky barrier diode and method

1987-04-30

1989-05-30

James, Andrew J.

357 34, 357 55, H01L 2948

Patent

active

048355801

ABSTRACT:
The preferred embodiments include Schottky barrier diode (80) clmaped bipolar transistors for use in planar integrated circuits with the diode (80) being formed in a trench to increase junction area, reduce series resistance from junction to the buried layer (64), and reduce lateral extent of the extrinsic base (78).

REFERENCES:
patent: 4586071 (1986-04-01), Tiwari
IBM Technical Disclosure Bulletin by Levi, vol. 20, #8, p. 3127, Jan. 1978.

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