Method of performing solution growth of a GaAs compound semicond

Details Method of performing solution growth of a GaAs compound semicond Method of performing solution growth of a GaAs compound semicond

1986-09-25

1987-09-08

Ozaki, George T.

Fishing, trapping, and vermin destroying

156624, H01L 21208

Patent

active

046921940

ABSTRACT:
In a solution growth method to perform an epitaxial growth by doping an amphoteric impurity into a Group III-V compound semiconductor crystal, vapor of a crystal-constituting Group V element is supplied to the solution, during the growth process, from above this solution under a controlled vapor pressure, while maintaining the growth temperature at a constant value by relying on, for example, a temperature difference technique, whereby the conductivity type in the grown crystal layer can be controlled easily as desired, and also a pn junction can be conveniently formed in the grown crystal.

REFERENCES:
patent: 3676228 (1972-07-01), Sakurai et al.
patent: 3705825 (1972-12-01), Touchy et al.
patent: 4035205 (1977-07-01), Lebailley et al.
patent: 4384398 (1983-05-01), Dutt
Nishizawa et al., J. Appl. Phys. vol. 44, No. 4, Apr. 1973, pp. 1638-1645.
Nishizawa et al., J. Crystal Growth, vol. 31 (1975), pp. 215-222.

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