Fishing – trapping – and vermin destroying
Patent
1985-12-24
1987-09-08
Roy, Upendra
Fishing, trapping, and vermin destroying
148DIG93, 148DIG140, 357 65, 437173, H01C 700, B23K 2600
Patent
active
046921907
ABSTRACT:
Semiconductor body is prepared and a film is formed on the semiconductor body, followed by forming an interconnection layer of aluminum alloy on the insulating film. A silicon oxide film is formed on the interconnection layer, followed by removing that portion of the silicon oxide film which is situated on a predetermined trimming area of the interconnection layer. A silicon nitride film is formed on the whole surface of the resultant structure. An energy beam is directed onto the predetermined trimming area of the interconnection layer, causing the interconnection layer to be locally heated to 400.degree. to 600.degree. C. whereby atoms in the interconnection layer migrate to permit the interconnection layer to be trimmed.
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Kabushiki Kaisha Toshiba
Roy Upendra
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