Method of making silicon-on-sapphire semiconductor devices

Details Method of making silicon-on-sapphire semiconductor devices Method of making silicon-on-sapphire semiconductor devices

1986-09-25

1988-10-04

Ozaki, George T.

Fishing, trapping, and vermin destroying

437 84, 437174, 437939, 437973, H01L 21423

Patent

active

047756411

ABSTRACT:
A radiation hardened silicon-on-insulator semiconductor device and method of making the same is disclosed. A region is formed in the silicon layer adjacent the insulating substrate which has a high density of naturally occurring crystallographic defects. This region substantially reduces the back-channel leakage that occurs when the device is operated after being irradiated.

REFERENCES:
patent: 3393088 (1968-07-01), Manasevit et al.
patent: 3658586 (1972-04-01), Wang
patent: 3885061 (1975-05-01), Corboy et al.
patent: 4177084 (1979-12-01), Lau et al.
patent: 4252574 (1981-02-01), Fabula
patent: 4259779 (1981-04-01), Ipri et al.
patent: 4279688 (1981-07-01), Abrahams et al.
patent: 4385937 (1983-05-01), Ohmura
patent: 4463492 (1984-08-01), Maeguchi
patent: 4509990 (1985-04-01), Vasudev
patent: 4634473 (1987-01-01), Swartz et al.
patent: 4659392 (1987-04-01), Vasudev
J. P. Amano et al., "Low-Defect-Density Silicon on Sapphire," Journal of Crystal Growth, vol. 56, pp. 296-303, 1982.
K. W. Carey et al., "Structural Characterization of Low-Defect-Density Silicon on Sapphire," Journal of Applied Physics, vol. 54, No. 8, pp. 4414-4420, Aug. 1983.
I. Golecki, "The Current Status of Silicon-on-Sapphire and other Heteroepitaxial Silicon-on-Insulator Technologies," Comparison of Thin Film Transistor and SOI Technologies (Materials Research Society Symposia Proceedings), vol. 33, pp. 3-23, North-Holland, N.Y.
A. Gupta et al., "Recent Advances In Hetero-Epitaxial Silicon-on-Insulator Technology," Solid State Technology, vol. 26, pp. 129-134, Jun. 1983.
S. Lau et al., "Improvement of Crystalline Quality of Epitaxial Silicon Layers by Ion Implantation Techniques," Applied Physics Letter, vol. 34, No. 1, pp. 76-78, Jan. 1979.
J. Y. Lee et al., "A Low-Leakage VLSI CMOS/SOS Process with Thin EPI Layers," 1983 IEEE International Electron Devices Meeting, Washington, D.C., Dec. 1983, Technical Digest No. 14.8, pp. 376-379.
D. C. Mayer et al., A Short-Channel CMOS/SOS Technology in Recrystallized 0.3-micron-Thick Silicon-on-Sapphire Films," IEEE Electron Device Letters, vol. EDL-5, No. 5, pp. 156-158, May, 1984.
R. Reedy et al., "Characterization of Defect Reduction and Aluminum Redistribution In Silicon Implanted SOS Films," Journal of Crystal Growth, vol. 58, pp. 53-60, 1982.
R. Reedy et al., "Suppressing Al Outdiffusion in Implantation Amorphized and Recrystallized Silicon on Sapphire Films," Applied Physics Letter, vol. 42, No. 8, pp. 707-709, Apr. 1983.

Affiliated with

Also associated with

Rating

Method of making silicon-on-sapphire semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making silicon-on-sapphire semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making silicon-on-sapphire semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2156318