Plasma processing apparatus adjusted for a batch-processing of a

Details Plasma processing apparatus adjusted for a batch-processing of a Plasma processing apparatus adjusted for a batch-processing of a

1996-03-15

1997-06-17

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118723MN, 118723E, C23C 1600

Patent

active

056393091

ABSTRACT:
The present invention provides an apparatus for a batch processing of a plurality of substrates at a time with plasma gas. The above chamber comprises the following elements. A chamber is provided for a batch processing of a plurality of substrates at a time with plasma gas. A plurality of sampling stages are accommodated within the chamber. The sampling stages are spaced apart from each other. Bottom electrodes are provided on the plurality of sampling stages. The bottom electrodes are spaced apart from each other so that substrates are placed on the bottom electrodes. The same number of top electrodes, as the bottom electrodes, are provided over a space which is positioned over the substrates. The top electrodes are positioned to make pairs with the bottom electrodes so that the substrates are positioned between the top and bottom electrodes paired respectively. Each of the top electrodes is divided into a plurality of parts separated from each other by microwave radiation ports through which microwave radiates toward the substrates. A process gas introduction section is provided on the chamber at a level above the substrates and below the top electrodes for introducing a process gas to the space over the substrates. A process gas discharging section is provided on the chamber for discharging the process gas from the chamber. A microwave radiation section is provided over the top electrodes for radiating microwaves toward the substrates via the microwave radiation ports to excite process gasses introduced by the process gas introducing section and generate plasma gases. A high frequency voltage applying section is provided to be electrically connected to at least any of the top and bottom electrodes for applying high frequency voltages between the top and bottom electrodes at high frequencies to accelerate plasma gases for processing the substrates.

REFERENCES:
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patent: 5202095 (1993-04-01), Houchin et al.
patent: 5359177 (1994-10-01), Taki et al.
patent: 5415719 (1995-05-01), Akimoto
patent: 5425842 (1995-06-01), Zijlstra
patent: 5464476 (1995-11-01), Gibb et al.
patent: 5529632 (1996-06-01), Katayama et al.

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