Thin film conductor which contains silicon and germanium as majo

Stock material or miscellaneous articles – Composite – Of quartz or glass

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136258, 338 2, 357 4, 428446, 428450, 428699, 428701, 428702, B32B 1500, H01L 2712, G01L 122

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048350591

ABSTRACT:
The invention relates to a thin film conductor which has a composition containing silicon and germanium as major components and has a structure in which both amorphous and microcrystalline phases are present, and a method of manufacturing the same by a CVD method. The resultant thin film conductor has characteristics, such as a high dark conductivity, a large gauge factor, a small temperature coefficient of the dark conductivity, a large thermoelectric power, and the like, and is used as a material for microelectronic devices having a sensor function.

REFERENCES:
patent: 3771026 (1973-11-01), Asai et al.
patent: 4344984 (1982-08-01), Kaplan et al.
patent: 4398343 (1983-08-01), Yamazaki
patent: 4409134 (1983-10-01), Yamazaki
patent: 4435445 (1984-03-01), Allred et al.
patent: 4498092 (1985-02-01), Yamazaki
patent: 4609771 (1986-09-01), Guha et al.
Metal-Nonmetal Transition in Amorphous Si-Au System at Low Temperatures: Measurements of Electrical Conductivity and Thermoelectric Power, vol. 46, No. 3, pp. 846-854, Mar. 1979.

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