Method for the preparation of a single crystal of silicon with d

Details Method for the preparation of a single crystal of silicon with d Method for the preparation of a single crystal of silicon with d

1995-11-30

1997-09-16

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 14, 117208, C30B 1520

Patent

active

056675844

ABSTRACT:
An improvement is proposed in the single crystal growing process of semiconductor silicon in the Czochralski process to obtain a silicon single crystal having a greatly decreased number of crystal defects without affecting the productivity. The improvement can be accomplished by an adequate arrangement of the cooling zone of the single crystal growing puller to have such a temperature distribution that the time taken by the growing single crystal to pass through the temperature range from the melting point of silicon to 1200.degree. C. is from 50 minutes to 200 minutes and the time taken by the growing single crystal to pass through the temperature range from 1200.degree. C. to 1000.degree. C. does not exceed 130 minutes.

REFERENCES:
patent: 4956153 (1990-09-01), Yamagishi et al.
patent: 5152867 (1992-10-01), Kitaura et al.
Patent Abstracts of Japan, vol. 13, No. 224 (C-599) (abstract of JP-A-01 037490) (May 1989).
Patent Abstracts of Japan, vol. 18, No. 575 (C-1268) (abstract of JP-A-62 011591) (Nov. 1994).

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