Fishing – trapping – and vermin destroying
Patent
1991-12-18
1993-02-16
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437228, 437189, 437190, 156644, H01L 2144
Patent
active
051871211
ABSTRACT:
Self-aligning process for fabricating a semiconductor structure and stud therefor on a semiconductor substrate comprises depositing a first material onto the substrate, depositing a second material onto the first material, removing excess portions of second material so as to form openings through the second material exposing excess portions of first material, whereby a selected portion of second material is retained and forms a sacrificial element, removing the excess portions of first material selectively to the substrate so as to extend the openings through the first material to the substrate, whereby a selected portion of first material is retained and forms the semiconductor structure, filling the openings with an insulating material, removing the sacrificial element selectively to the insulating material and the semiconductor structure for forming a contact window opening for allowing access to the semiconductor structure, and filling the contact window opening with stud material so as to contact the semiconductor structure for forming the stud.
REFERENCES:
patent: 4410622 (1983-10-01), Dalal et al.
patent: 4543707 (1985-10-01), Ito et al.
patent: 4702792 (1987-10-01), Chow et al.
patent: 4743568 (1988-05-01), Wood
patent: 4883767 (1989-11-01), Gray et al.
patent: 4933303 (1990-06-01), Mo
patent: 4956313 (1990-09-01), Cote et al.
patent: 4997790 (1991-03-01), Woo et al.
patent: 5008216 (1991-04-01), Huang et al.
patent: 5008730 (1991-04-01), Huang et al.
patent: 5039620 (1991-08-01), Yamazaki et al.
patent: 5055423 (1991-10-01), Smith et al.
patent: 5068207 (1991-11-01), Manocha et al.
Cote Donna R.
Stanasolovich David
Warren Ronald A.
Hearn Brian E.
Holtzman Laura M.
International Business Machines - Corporation
Lau Richard
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