Process for fabrication of a semiconductor structure and contact

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437228, 437189, 437190, 156644, H01L 2144

Patent

active

051871211

ABSTRACT:
Self-aligning process for fabricating a semiconductor structure and stud therefor on a semiconductor substrate comprises depositing a first material onto the substrate, depositing a second material onto the first material, removing excess portions of second material so as to form openings through the second material exposing excess portions of first material, whereby a selected portion of second material is retained and forms a sacrificial element, removing the excess portions of first material selectively to the substrate so as to extend the openings through the first material to the substrate, whereby a selected portion of first material is retained and forms the semiconductor structure, filling the openings with an insulating material, removing the sacrificial element selectively to the insulating material and the semiconductor structure for forming a contact window opening for allowing access to the semiconductor structure, and filling the contact window opening with stud material so as to contact the semiconductor structure for forming the stud.

REFERENCES:
patent: 4410622 (1983-10-01), Dalal et al.
patent: 4543707 (1985-10-01), Ito et al.
patent: 4702792 (1987-10-01), Chow et al.
patent: 4743568 (1988-05-01), Wood
patent: 4883767 (1989-11-01), Gray et al.
patent: 4933303 (1990-06-01), Mo
patent: 4956313 (1990-09-01), Cote et al.
patent: 4997790 (1991-03-01), Woo et al.
patent: 5008216 (1991-04-01), Huang et al.
patent: 5008730 (1991-04-01), Huang et al.
patent: 5039620 (1991-08-01), Yamazaki et al.
patent: 5055423 (1991-10-01), Smith et al.
patent: 5068207 (1991-11-01), Manocha et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process for fabrication of a semiconductor structure and contact does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for fabrication of a semiconductor structure and contact, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for fabrication of a semiconductor structure and contact will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2148030

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.