Process for preparing electroluminescent device of compound semi

Fishing – trapping – and vermin destroying

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437127, 437173, 437185, H01L 21363, H01L 21443

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051871165

ABSTRACT:
A process for preparing an electroluminescent device of a compound semiconductor comprising a step (A) of epitaxially forming over a semiconductor substrate an electroconductive layer of a compound semiconductor and an electroluminescent layer of a p-n junction type compound semiconductor placed over the electroconductive layer and a step (B) of forming a pair of ohmic electrodes as electrically connected to each of said layers, both of the steps (A) and (B) being performed by using molecular beam growth under the irradiation with a light beam.

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Elsner et al., "Pulsed-Laser-Assisted Molecular Beam Epitaxy", IBM TDB, vol. 26, No. 11, Apr. 1984, pp. 6215-6216.
Myers et al., "Properties of HgCdTe . . . Grown by Photoassisted Molecular Beam Epitaxy", J. Vac. Sci. Technol. A 7(2), Mar./Apr. 1989, pp. 300-304.
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