Structure and fabrication method for a thin film transistor

Details Structure and fabrication method for a thin film transistor Structure and fabrication method for a thin film transistor

1995-01-27

1997-03-04

Monin, Jr., Donald L.

Fishing, trapping, and vermin destroying

437 41, 437 62, 257 63, 257307, H01L 2906, H01L 21265

Patent

active

056078650

ABSTRACT:
A structure and fabrication method for a thin film transistor which is suitable for an SRAM memory cell. The thin film transistor structure includes an insulating substrate and a semiconductor layer formed as a wall on the insulation substrate. A gate insulation film is formed on the semiconductor layer and over the entire surface of the insulation substrate. A gate electrode formed on the gate insulation film at the center part of the semiconductor layer. Impurity regions are formed in the semiconductor layer on both sides of the gate electrode.

REFERENCES:
patent: 5065210 (1991-11-01), Hirakawa
patent: 5115289 (1992-05-01), Hisamoto et al.
patent: 5391506 (1995-02-01), Tada et al.
patent: 5459344 (1995-10-01), Wakamiya et al.

Affiliated with

Also associated with

Rating

Structure and fabrication method for a thin film transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Structure and fabrication method for a thin film transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure and fabrication method for a thin film transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2145591