Flash memory having low threshold voltage distribution

Details Flash memory having low threshold voltage distribution Flash memory having low threshold voltage distribution

1997-11-24

1999-11-02

Nelms, David

Static information storage and retrieval

Floating gate

Particular biasing

36518524, 36518529, G11C 1604

Patent

active

059782781

ABSTRACT:
A flash memory device having a low threshold voltage distribution is disclosed. The threshold voltage in a program state of a flash memory cell is defined to be near or slightly greater than approximately 3.0 volts. The threshold voltage in an erased state is defined to be less than 0.7 volts or at ground level. The low threshold voltage distribution makes it possible to use a low voltage around 3.0 volts for the gate of the memory cell in a read operation. The UV erased threshold is raised to near the threshold voltage of a program state to avoid data retention problem.

REFERENCES:
patent: 5526315 (1996-06-01), Kaya et al.
patent: 5724289 (1998-03-01), Watanabe
patent: 5729494 (1998-03-01), Gotou et al.

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