Non-volatile semiconductor memory device

Details Non-volatile semiconductor memory device Non-volatile semiconductor memory device

1998-03-30

1999-11-02

Yoo, Do Hyun

Static information storage and retrieval

Floating gate

Particular biasing

36518509, 36518522, 365200, 3652335, G11C 700

Patent

active

059782730

ABSTRACT:
A non-volatile semiconductor memory device is provided which includes a data memory block having a plurality of non-volatile memory cells, in which data in the plurality of non-volatile memory cells of the data memory block is erased before writing data into the non-volatile memory cells of the data memory block. The non-volatile semiconductor memory device further includes: an erase complete data memory region having a plurality of non-volatile memory cells which are subjected to erasure simultaneously with the plurality of non-volatile memory cells of the data memory block; a writing element for writing erase complete data including a plurality of bits into the erase complete data memory region, after erasing data in the non-volatile memory cells of the data memory block and data in the non-volatile memory cells of the erase complete data memory region; and a reading element for reading the erase complete data in the erase complete data memory region.

REFERENCES:
patent: 5530828 (1996-06-01), Kaki et al.
patent: 5606532 (1997-02-01), Lambrache et al.
patent: 5805501 (1998-09-01), Shiau et al.
patent: 5815441 (1998-09-01), Kobatake
patent: 5818754 (1998-10-01), Ogura

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