Mixture thin film forming apparatus

Coating apparatus – Control means responsive to a randomly occurring sensed... – Temperature responsive

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118715, 118724, 118726, C23C 1600

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active

051861208

ABSTRACT:
The present invention is directed to a mixture thin film forming apparatus for accumulating gasified components on a substrate which is arranged in a reaction chamber. According to the present invention, respective components of a gas supply system, which are different in heat capacity from each other, are independently controlled in their temperatures by temperature control parts respectively, so that the respective components can be adjusted to desired temperatures. Thus, the gas supply system is prevented from deviation of temperature distribution, whereby the overall gas supply system can be adjusted within a prescribed temperature range. Thus, raw materials are prevented from precipitation, irregular reaction or the like, to enable stable gas supply.

REFERENCES:
patent: 4286545 (1981-09-01), Takagi et al.
patent: 4401052 (1983-08-01), Baron et al.
patent: 4619844 (1986-10-01), Pierce et al.
patent: 4793282 (1988-12-01), Greenberg et al.
Prabhu, R. S., "Chemical Vapor Deposition of Molybdsnum", IBM Technical Disclosure Bulletin, vol. 13, No. 9, Feb. 1971, p. 2535.

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