Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1996-03-08
1999-11-02
Tran, Minh Loan
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257 98, 257618, 257622, 257623, 257624, H01L 3100, H01L 2906
Patent
active
059776048
ABSTRACT:
Buried layers are formed within a semiconductor. Metallic or insulating buried layers are produced several microns within a semiconductor substrate. The buried layer can confine current to the buried layer itself by using a conductive material to create the buried layer. The buried layer can also confine current to a specified area of the semiconductor, by using an insulating material inside of the buried layer or by leaving a created void within the material. The buried layer is useful in the construction of a semiconductor Vertical Cavity Laser (VCL). A buried isolation layer confines the current to a narrow active region increasing efficiency of the VCL. The buried layer is also useful in fabricating discrete devices, such as diodes, transistors, and photodetectors, as well as fabricating integrated circuits.
REFERENCES:
patent: 4638552 (1987-01-01), Shimbo et al.
patent: 4891329 (1990-01-01), Reisman et al.
patent: 4948748 (1990-08-01), Kitahara et al.
patent: 5286671 (1994-02-01), Kurtz et al.
patent: 5346848 (1994-09-01), Grupen-Shemansky et al.
patent: 5376580 (1994-12-01), Kish et al.
patent: 5390210 (1995-02-01), Fouquet
patent: 5393711 (1995-02-01), Biallas et al.
patent: 5407856 (1995-04-01), Quenzer et al.
patent: 5413951 (1995-05-01), Ohori et al.
patent: 5416044 (1995-05-01), Chino et al.
patent: 5502316 (1996-03-01), Kish et al.
patent: 5513204 (1996-04-01), Jayaraman
patent: 5724376 (1998-03-01), Kish, Jr. et al.
Double-fused long-wavelength vertical-cavity lasers, by Dubravko Ivan Babic, Ph.D. Dissertation, ECE Technical Report #95-20, Aug. 1995, University of California at Santa Barbara, California 93106.
Babic Dubravko Ivan
Bowers John E.
The Regents of the University of California
Tran Minh Loan
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